2SA811A 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high dc current gain. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -50 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -120v, i e =0 -50 na emitter cutoff current i ebo v eb =-5v,i c =0 -50 na v ce =-6v,i c = -1ma 135 500 900 v ce =-6v,i c = -0.1ma 100 500 collector-emitter saturation voltage * v ce(sat) i c = -10ma , i b = -1ma -0.09 -0.30 v base-emitter voltage * v be v ce =-6v,i c = -1ma -0.55 -0.61 -0.65 v gain bandwidth product f t v ce =-6v,i e = 1ma 50 90 mhz output capacitance c ob v cb = -30v , i e = 0 , f = 1.0mhz 2.0 3.0 pf * pulse test: tp 350 s; d 0.02. dc current gain * h fe h fe classification marking c15 c16 c17 c18 hfe 135 270 200 400 300 600 450 900 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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